hafnium oxide lanthanum

The atomic and electronic structure of lanthanum-doped hafnium oxide ($left.mat{HfO}_{2}: mat{La}right)$ is studied within the density functional theo …

The electronic structure of oxygen vacancies in lanthanum-doped hafnium oxide (HfO 2:La) is studied using the density functional theory.The simulation is carried out for the optimal structure of HfO 2:La in three crystalline phases for an oxygen vacancy involved in the impurity charge compensation that is structural element, as well as for a …

Kirbach, S., Kühnel, K. & Weinreich, W. Piezoelectric hafnium oxide thin films for energy-harvesting applications. In 2018 IEEE 18th International Conference on Nanotechnology 1–4 (IEEE, 2018).

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric …

The electronic structure of oxygen vacancies in lanthanum-doped hafnium oxide (HfO 2:La) is studied using the density functional theory.The simulation is carried out for the optimal structure of HfO 2:La in three crystalline phases for an oxygen vacancy involved in the impurity charge compensation that is structural element, as well as for a …

Hafnium oxide has many polytypes that are stable in different temperature and pressure regimes. At room temperature and pressure, ... to antiferroelectric-like behavior is often observed and this is especially well documented for silicon, 94 aluminum, 79 lanthanum, 87 and zirconium 88 containing compositions.

The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen …

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all …

High-k/metal gate interfaceThe high-k/metal gate interfacial layer can be either an insulating layer or a conductive layer.For the conventional poly-Si gate, a thick insulating silicate layer can be formed. For the La 2 O 3 /Al stack, the interfacial layer is aluminum oxide or lanthanum aluminates. These interface layers generally have much …

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material. La:HfO2 appears to be a material with a broad window of process parameters, and …

Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for …

What is claimed is: 1. A process for fabricating a semiconductor structure, the process comprising the steps of: providing a substrate; growing an amorphous layer of hafnium oxide overlying the substrate; and doping the amorphous layer of hafnium oxide with a dopant comprising a material having a chemical formulation LnO x, where Ln is …

The lanthanum-doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back-end of line devices. Herein, a detailed temperature-dependent field-cycling study is performed in a wide temperature range from liquid nitrogen to ...

(Supplementary Information) Solution-Processed Amorphous Hafnium-Lanthanum Oxide Gate Insulator for Oxide Thin-Film Transistors . Jieun Ko,a Joohee Kim,a Si Yun Park,a Eungkyu Lee, a Kyongjun Kim, a Keon- Hee Lim,a and Youn Sang Kim a,b* a Program in Nano Science and Technology, Graduate School of Convergence Science and …

HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most …

The first one consists of silicon oxide and hafnium oxide, and the other one consists lanthanum-lutetium oxide and gadolinium-silicon oxide. Inside each group, observed Raman spectra are similar. In the case of first group, this similarity concerns spectra of SiO. The bands observed for high- materials can be correlated with bands …

Solution-processed high-K dielectrics for oxide thin-film transistors (TFTs) have been widely studied with the objective of achieving high performance and low-cost TFTs for next-generation displays. In this study, we introduce an amorphous hafnium-lanthanum oxide (HfLaOx) gate insulator with high electrical permittivity which was fabricated by the …

In 1794, Professor Gadolin obtained yttria, an impure form of yttrium oxide, from the mineral. In 1803, Berzelius and Klaproth secluded the first Cerium compound. Later, Moseley used an x-ray spectra of the elements to prove that there were fourteen elements between Lanthanum and Hafnium. The rest of the elements were later …

The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due …

[55] Boncheol 2022 Improved ferroelectric characteristics of ALD lanthanum-doped hafnium oxide thin film by controlling post-cooling time Appl Surf Sci 599 153905. Crossref; Google Scholar [56] Song T F, Bachelet R, Saint-Girons G et al 2021 Thickness effect on the ferroelectric properties of La-doped HfO 2 epitaxial films down to 4.5 nm J ...

Hafnium lanthanum oxide (HLO) thin film, known for their excellent ferroelectric properties, have emerged as a promising strategy for future non-volatile …

Improved ferroelectric characteristics of ALD lanthanum-doped hafnium oxide thin film by controlling post-cooling time - ScienceDirect. Applied Surface Science. …

The energy of the material was calculated using the relax method, wherein the atoms were allowed to relax until the atomic forces of all components were smaller than 0.025 eV/Å [16].Experimentally, Si has been reported as the effective dopant element in hafnium oxide thin films, showing ferroelectric and pyroelectric behaviour [9], [17].Hence …

Synopsis. Lanthanum-doped HfO2is a material with a broad window of process parameters. Variations of the dopant concentration lead to changes in the …

We demonstrate the feasibility of this approach for a ferroelectric hafnium zirconium oxide film of 10 nm initial thickness, which we integrate into a double-layer ferroelectric tunnel junction. The atomic layer etch rate of ferroelectric hafnium zirconium oxide using HF and dimethylaluminum chloride is found to be ∼0.2 Å/cycle.

It is the model for all the other trivalent rare earths and it is the second most abundant of the rare earths after cerium. Lanthanum is found in minerals such as monazite and bastnasite. The name lanthanum originates from the Greek word Lanthaneia, which means 'to lie hidden'. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material ...

The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.inorgchem.7b03149.. Additional structural data concerning the polycrystalline nature of lanthanum-doped ferroelectric hafnium oxide in a capacitor structure with titanium nitride electrodes (XRD, SEM, TEM, TOFSIMS) and …

Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. Gennady Ya. Krasnikov. The discovery of ferroelectric properties …

Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. October 2020. Applied Physics Letters 117 (16):162901. DOI: 10.1063/5.0023554. Authors: Damir Islamov ...

Here, by structure evolution between fluorite HfO 2 and perovskite hafnate who have similar metal sublattices, we create an amorphous hafnium-based oxide that exhibits a giant U rec of ~155 J/cm ...

Here, by structure evolution between fluorite HfO 2 and perovskite hafnate, we create an amorphous hafnium-based oxide that exhibits the energy density of ~155 J/cm 3 with an efficiency of 87% ...

The lanthanum-doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back-end of line devices. Herein, a detailed temperature-dependent field-cycling study is performed in a wide temperature range from liquid …